CMPA901A035F
Brand: CREE
The CMPA901A035F is Wolfspeed's 35W GaN MMIC power amplifier for X-band (9-10GHz) applications, built on a gallium nitride (GaN) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit grown on a silicon carbide (SiC) substrate. The SiC substrate's superior thermal conductivity enables high power density with efficient heat dissipation, while the flange-mount package provides direct heatsink attachment for high-power radar and communication transmitters. Operating from a 28V supply with high gain and efficiency across the 9-11GHz instantaneous bandwidth, it is the amplifier of choice for X-band pulsed radar, marine weather radar, military radar, electronic warfare, and satellite communication uplink systems.
Product Specifications
CMPA901A035F - Wolfspeed GaN MMIC Power Amplifier, 35W, 9-10GHz X-Band
Wolfspeed (a MACOM company) - GaN-on-SiC HEMT MMIC, 28V Supply, Flange Mount Package
MFR Part #: CMPA901A035FSuperb SKU: SUP-CMPA901A035F
In Stock - Ready to Ship
The CMPA901A035F is Wolfspeed's 35W GaN MMIC power amplifier for X-band (9-10GHz) applications, built on a gallium nitride (GaN) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit grown on a silicon carbide (SiC) substrate. The SiC substrate's superior thermal conductivity enables high power density with efficient heat dissipation, while the flange-mount package provides direct heatsink attachment for high-power radar and communication transmitters. Operating from a 28V supply with high gain and efficiency across the 9-11GHz instantaneous bandwidth, it is the amplifier of choice for X-band pulsed radar, marine weather radar, military radar, electronic warfare, and satellite communication uplink systems.
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Key Features
35W output power — high RF power density in a compact MMIC form factor for X-band transmitters
9.0 – 10.0 GHz X-band coverage — with 9–11 GHz instantaneous bandwidth for wideband radar and communication waveforms
GaN-on-SiC HEMT technology — silicon carbide substrate delivers 3x better thermal conductivity than conventional substrates, enabling higher power density and reliability
28V supply voltage — standard radar/EW power rail, simplifying system power architecture
High gain and efficiency — monolithic matching networks provide consistent gain and power-added efficiency across the full band
Flange-mount package — bolt-down flange for direct thermal and mechanical attachment to heatsinks and chassis
MMIC monolithic integration — input/output matching and DC biasing integrated on-chip, reducing external component count
EAR99 export classification — HTSUS 8542.33.0001, facilitating international procurement
Technical Specifications
| Manufacturer | Wolfspeed (a MACOM company) |
| Part Number | CMPA901A035F |
| Device Type | GaN HEMT MMIC Power Amplifier (SiC substrate) |
| Output Power | 35 W |
| Frequency Range | 9.0 – 10.0 GHz (X-band) |
| Instantaneous Bandwidth | 9 – 11 GHz |
| Supply Voltage | 28 V |
| Technology | GaN HEMT on SiC substrate |
| Package | Flange mount (bolt-down) |
| ECCN | EAR99 |
| HTSUS Code | 8542.33.0001 |
| RoHS | Compliant |
Product Details
GaN-on-SiC Technology — Why It Matters at X-Band
The CMPA901A035F uses GaN HEMT epitaxial layers on a silicon carbide (SiC) substrate. SiC provides roughly 3x the thermal conductivity of GaN-on-silicon or GaAs approaches, directly translating to higher power density and improved reliability at X-band frequencies where thermal management is the limiting factor.
vs. GaAs amplifiers: GaN delivers 5-10x higher power density at the same die area, enabling 35W output in a compact MMIC that would require multiple GaAs stages. The wider bandgap also supports higher operating voltage (28V) and higher junction temperatures.
Monolithic integration: Input/output matching networks and DC bias circuitry are integrated on the MMIC, minimizing external components and simplifying the RF board design.
Key Applications
X-Band Pulsed Radar — air traffic control, surveillance, tracking radar transmitters
Marine Weather Radar — shipborne weather and navigation radar
Military Radar — fire control, target acquisition, missile guidance
Electronic Warfare — jamming transmitters, electronic countermeasures
Satellite Communication — X-band uplink amplifiers, ground station transmitters
Test & Measurement — X-band signal source amplification, RF test fixtures
Wolfspeed X-Band GaN MMIC Amplifier Family
| Part Number | Output Power | Frequency | Package |
|---|---|---|---|
| CMPA901A020F | 20 W | 9 – 10 GHz | Flange |
| CMPA901A035F | 35 W | 9 – 10 GHz | Flange |
| CMPA901A020S | 20 W | 9 – 10 GHz | Surface Mount |
The CMPA901A035F is the highest-power member of the Wolfspeed 9-10GHz X-band MMIC family.
Why Source CMPA901A035F from Superb Automation?
RF Transmitter BOM — GaN PA + driver + power supply + thermal management + filters - one PO
X-Band RF PCB Design — 10GHz impedance-controlled routing, low-loss substrate selection, RF grounding
Flange Assembly — bolt-down flange mounting with thermal interface material optimization
RF Test Support — Spectrum/network analyzer verification of gain, output power, and efficiency
25 Years Trusted — Electronic components + PCBA partner since 2000
Genuine Parts — Direct from authorized Wolfspeed/MACOM channels, full lot traceability
Frequently Asked Questions
What is the CMPA901A035F used for?
A 35W GaN MMIC power amplifier for X-band (9-10GHz) applications including pulsed radar, marine weather radar, military radar, electronic warfare, and satellite uplink. GaN-on-SiC technology provides the power density and thermal performance required for high-power RF transmitters.
What is the difference between CMPA901A035F and CMPA901A020F?
Both are 9-10GHz X-band GaN MMIC amplifiers in flange packages. CMPA901A035F delivers 35W output, while CMPA901A020F delivers 20W. Choose the 035F for higher transmit power; the 020F for lower-power stages or where a 20W driver stage is sufficient.
What does GaN-on-SiC mean for this amplifier?
The GaN HEMT transistor layers are grown on a silicon carbide (SiC) substrate. SiC's ~3x better thermal conductivity (vs. silicon or GaAs) allows higher power density, higher junction temperature operation, and better long-term reliability — critical for 35W X-band operation.
How is the flange package mounted?
The flange package bolts directly to a heatsink or chassis using the mounting holes, with thermal interface material (TIM) between flange and heatsink for optimal heat transfer. RF input/output are via microstrip or coaxial transitions matched to 50 ohms.
Is the CMPA901A035F suitable for pulsed radar?
Yes. The CMPA901A035F is designed for X-band pulsed radar including marine weather radar and military radar. GaN technology supports high peak power with fast pulse rise/fall, enabling high-resolution radar waveforms across the 9-11GHz instantaneous bandwidth.
