X-Band 1000W GaN Solid-State Power Amplifier
AMP090950-60P · 9.0–9.5 GHz · Pulsed · WR90 Waveguide · Military-Grade,The standard model also accepts design proposals, production, and testing. · Superb Automation,
Product Specifications
X-Band 1000W GaN Solid-State Power Amplifier PCBA
SAMP090950-60P · 9.0–9.5 GHz · Pulsed · WR90 Waveguide · Military-Grade · Superb Automation
Product Overview
The SAMP090950-60P is a military-grade X-band pulsed solid-state power amplifier (SSPA) operating from 9.0 to 9.5 GHz, capable of delivering 1000W peak output power (60 dBm). Built with the latest GaN HEMT (Gallium Nitride High Electron Mobility Transistor) technology in a Class AB architecture, this compact module replaces traditional vacuum-tube TWT amplifiers — offering instant-on operation, longer service life, superior linearity, and intelligent remote control.
Designed as the "pulse heart" of modern radar transmitters, electronic warfare (EW) jamming systems, and high-power RF test benches, the SAMP090950-60P supports ultra-flexible pulse widths from 200 ns to 200 μs at duty cycles up to 20%. It maintains rated performance across the full military temperature range of -40°C to +60°C case temperature.
Superb Automation provides full turnkey PCBA assembly for this SSPA module — including GaN device mounting, waveguide interface integration, conformal coating, and functional test — at our ISO 9001 certified 5,000m² SMT facility.
Key Features
| Feature | Specification |
|---|---|
| Frequency Band | 9.0 – 9.5 GHz (X-Band) |
| Peak Output Power | 1000W typical (800W min) @ 50μs pulse, 10% duty |
| Peak Output Power (Extended) | 800W @ 200μs pulse, 20% duty cycle |
| Small-Signal Gain | 70 dB typical |
| Gain Adjustment Range | 20 dB, 1 dB step resolution (built-in digital attenuator) |
| Pulse Width Range | 200 ns – 200 μs |
| Max Duty Cycle | 20% |
| Input Power (nominal) | +5 dBm |
| Max Input Power (no damage) | +10 dBm |
| Input Return Loss | -10 dB |
| 2nd Harmonic Suppression | ≤ -30 dBc |
| Spurious Suppression | ≤ -60 dBc (measured to 18 GHz) |
| Technology | GaN HEMT, Solid-State Class AB |
| Impedance | 50 Ω input/output |
Electrical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Operating Frequency | BW | 9.0 | — | 9.5 | GHz | — |
| Peak Output Power | PSAT | 800 | 1000 | 1100 | W | 50μs pulse, 10% duty |
| Peak Output Power | PSAT | 800 | — | — | W | 200μs pulse, 20% duty |
| Input Power | PIN | — | 5 | — | dBm | Attenuator nominal, 1000W POUT |
| Small-Signal Gain | GSS | — | 70 | — | dB | VNA swept, -20 dBm |
| Gain Adjustment Range | GADJ | — | 20 | — | dB | Same as GSS |
| Gain Adjustment Step | GSTEP | — | 1 | — | dB | Same as GSS |
| Max Input (no damage) | PIN MAX | — | — | 10 | dBm | Unlimited duration |
| Input Return Loss | IRL | — | -10 | — | dB | VNA swept, -20/0 dBm |
| 2nd Harmonics | 2nd | — | -30 | — | dBc | POUT = 1000W |
| Spurious | Spur | — | -60 | — | dBc | Measured to 18 GHz |
| Operating Voltage | VDC | 38 | 40 | 41 | V | +40V rail |
Environmental & Mechanical Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Operating Case Temperature | -40 | — | +60 | °C |
| Storage Temperature | -40 | — | +85 | °C |
| Relative Humidity (non-condensing) | — | — | 95 | % |
| Dimensions (L×W×H) | 330.7 × 128 × 48 | mm | ||
| Weight | ≤ 3.5 | kg | ||
Interface & Connectors
| Connector | Type | Designation | Description |
|---|---|---|---|
| RF Input | SMA Female | J1 | 50Ω, +5 dBm nominal drive level |
| RF Output | WR90 Waveguide | J2 | Low-loss high-power transmission; eliminates coaxial connector breakdown at kW levels |
| DC Power | Hybrid D-Sub 7-Pin Male (7W2) | J3 | Dual supply: +40V (A1-A2) + +28V (pins 1-2 / 4-5), each with dedicated ground return |
| Control | J30J-15ZKP | J4 | RS485 (A/B), temperature monitor (10mV/°C, 500mV offset), PA Enable (TTL 0/3.3V) |
⚠️ Power Sequencing Note: The SAMP090950-60P requires dual DC supplies — +40V for the main GaN power stage and +28V for internal driver/control circuits. Each rail has a dedicated ground return. Proper power sequencing must be observed: apply +28V first, then +40V; remove in reverse order.
Built-in Control & Protection
| Function | Detail |
|---|---|
| RS485 Serial Interface | Remote monitoring (temperature, status) and control (attenuator setting, PA enable) via standard Modbus-compatible protocol |
| PA Enable (TTL) | 0/3.3V logic; internally pulled low (default OFF); high = amplifier enabled. Supports pulse synchronization up to 20% duty |
| Temperature Monitor | Analog voltage output @ 10mV/°C with 500mV offset (e.g., 0.75V = 25°C) |
| Built-in Protection | Over-temperature, over-voltage, over-current, and high-VSWR protection with auto-shutdown |
| Digital Attenuator | 20 dB range, 1 dB steps — adjust output power via RS485 without external attenuators |
Why GaN Solid-State Replaces TWT
| Parameter | GaN SSPA (SAMP090950-60P) | Traditional TWT Amplifier |
|---|---|---|
| Warm-up Time | Instant (zero) | 3–5 minutes (cathode heater) |
| Service Life | 100,000+ hours | 5,000–15,000 hours (cathode depletion) |
| Linearity | Excellent (Class AB) | Moderate (non-linear saturation) |
| High Voltage | 40V DC (safe, low-voltage) | 5–20 kV (safety hazard) |
| Size/Weight | 330mm, 3.5 kg | Typically 2–5× larger & heavier |
| Reliability | Graceful degradation | Catastrophic failure at end-of-life |
| Maintenance | None required | Periodic replacement |
Superb Automation PCBA Assembly Capabilities
Our 5,000m² SMT facility in Shenzhen is equipped to handle the demanding assembly requirements of high-power GaN RF amplifier modules:
| Capability | Specification |
|---|---|
| GaN Device Mounting | AuSn (80/20) eutectic die attach or high-thermal-conductivity epoxy; void rate < 5% verified by X-ray |
| RF PCB Substrate | Rogers RO4350B, RO3003, RT/duroid 5880, TMM series; mixed-stack with FR4 for control circuits |
| Thermal Management | Copper-moly-copper (CMC) carriers, direct-bond copper (DBC), or aluminum nitride (AlN) substrates |
| Waveguide Interface | Precision WR90 flange alignment, conductive gasket sealing, torque-controlled assembly |
| Wire Bonding | 25μm/50μm gold wedge bonding for RF interconnects; ribbon bonding for high-current DC paths |
| Conformal Coating | Parylene or acrylic (AR) coating for moisture, salt-fog, and fungus resistance (MIL-I-46058) |
| Hermetic Sealing | Laser seam welding for module lids; helium leak test per MIL-STD-883 |
| Testing | Full RF power sweep, pulsed S-parameters, spectrum analysis (harmonics/spurious), thermal imaging under load, 24h burn-in |
Target Applications
| Application | Why SAMP090950-60P |
|---|---|
| Ground-Based Air Defense Radar | X-band provides high angular resolution for target tracking; 1000W peak power enables long-range detection |
| Marine Navigation Radar | Compact size fits below-deck installations; instant-on eliminates warm-up delay in emergency situations |
| Electronic Warfare (EW) Jammers | Wide pulse width flexibility (200ns–200μs) supports both deceptive and barrage jamming modes |
| Drone Detection / C-UAS Radar | X-band ideal for small-RCS target detection; solid-state reliability for 24/7 continuous operation |
| Weather Radar | Clean spectrum (≤ -60 dBc spurious) ensures accurate precipitation measurement without self-interference |
| SAR / ISAR Imaging Radar | High gain (70 dB) + linear Class AB operation preserves phase coherence for synthetic aperture processing |
| High-Power RF Test Bench | Built-in digital attenuator (20 dB, 1 dB steps) simplifies test setup — no external step attenuator needed |
| Satellite Communication Uplink | X-band military SATCOM; WR90 waveguide compatible with standard feed horn antennas |
| Missile Seeker / Fire Control Radar | -40°C operation, 3.5 kg weight, ruggedized for high-G launch environments |
Procurement Models
| Model | Delivery Model | Description |
|---|---|---|
| Standard Product | Off-the-Shelf | SAMP090950-60P as specified in this datasheet — 9.0–9.5 GHz, 1000W, WR90 waveguide, RS485 control. Fully tested and ready to integrate. Available ex-stock or short lead time. |
| Build-to-Print | Custom Manufacturing | Customer provides complete design package (Gerber, BOM, assembly drawings, test specifications). We manufacture strictly to your design under NDA protection. Ideal for proprietary defense systems. |
| Custom Variant | Co-Engineering | Based on the SAMP090950-60P platform, we adapt frequency band (within X/Ku), output power, pulse parameters, or interface to your requirements. Joint design review, NDA-secured. |
🔒 NDA Protection: All custom design files, specifications, and application details are protected under a bilateral Non-Disclosure Agreement (NDA). Your IP stays yours — we manufacture, we don't compete. NDA execution typically within 48 hours.
Ordering Information
| Part Number | Service | Lead Time |
|---|---|---|
| SAMP090950-60P-STD | Standard product — tested, calibrated, ready to ship | 2–4 weeks |
| SAMP090950-60P-PCBA | Full turnkey PCBA — PCB fab (Rogers RF substrate), GaN component procurement, SMT assembly, wire bonding, waveguide integration, conformal coating, full RF functional test | 6–10 weeks |
| SAMP090950-60P-ASSY | Assembly-only — customer supplies PCB + components; we provide SMT, wire bonding, waveguide mounting, coating, and test | 4–6 weeks |
| SAMP090950-60P-CUSTOM | Custom variant — modified frequency/power/interface per customer spec, NDA-protected | Consult |
For volume pricing, NDA execution, or custom variant consultation: Info@superb-tech.com
Request Quote / NDA
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