CGHV96100F2
Brand: CREE
CGHV96100F2 is a high-performance RF power transistor from Wolfspeed (Cree). Designed for RF and microwave applications, it operates up to 960 MHz with high output power, high efficiency, and rugged construction — well-suited for telecommunications, radar systems, and industrial/scientific/medical (ISM) applications. Built on gallium nitride (GaN) on silicon carbide (SiC) substrate technology, it delivers superior power density and thermal management.
Product Specifications
Product Overview
The CGHV96100F2 from CREE is a RF / microwave device engineered for high-frequency performance with excellent linearity, low noise figure, and robust power handling for wireless infrastructure and defense systems. Cree (Wolfspeed) is a leader in wide-bandgap semiconductor technology, providing SiC MOSFETs, Schottky diodes, and GaN-on-SiC RF devices for power and RF applications.
CGHV96100F2 is a high-performance RF power transistor from Wolfspeed (Cree). Designed for RF and microwave applications, it operates up to 960 MHz with high output power, high efficiency, and rugged construction — well-suited for telecommunications, radar systems, and industrial/scientific/medical (ISM) applications. Built on gallium nitride (GaN) on silicon carbide (SiC) substrate technology, it delivers superior power density and thermal management.
Superb Automation partners with leading brands including Qorvo, TI, ADI, XILINX, NVIDIA, Intel, ST, MACOM, Renesas, and Coilcraft.
| Manufacturer | MACOM |
| Product Category | GaN FETs |
| Shipping Restrictions | This product may require additional documentation to export from the United States. |
| RoHS | |
| Mounting Style | Screw Mount |
| Package / Case | 440210 |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 12 A |
| Vgs th - Gate-Source Threshold Voltage | - 3 V |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Brand | MACOM |
| Configuration | Single |
| Development Kit | CGHV96100F2-TB |
| Gain | 12.4 dB |
| Maximum Operating Frequency | 9.6 GHz |
| Minimum Operating Frequency | 7.9 GHz |
| Output Power | 131 W |
| Packaging | Tray |
| Product | GaN HEMTs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Type | GaN HEMT |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
| Unit Weight | 2.301097 oz |
Key Features
Wideband frequency coverage with flat gain response
High linearity with excellent OIP3 and P1dB performance
Compact surface-mount or flange-mount packaging options
Low noise figure for sensitive receiver front-end designs
50-ohm matched RF ports for simplified system integration
Robust GaN/GaAs process technology for high reliability
Applications
SATCOM Ground Terminals5G mmWave InfrastructurePhased-Array Radar SystemsElectronic Warfare (EW)Point-to-Point Radio LinksRF Test & Measurement
PCB & Industry Solutions
PCB Manufacturing Capabilities: 16–60L high-layer-count PCBs, HDI with mechanical blind vias, ENIG/ENEPIG surface finish, heavy copper (2oz+), TUC (Taiwan Union Technology) high-Tg laminates.
Industry Solution Experience:
AI Servers | NEV Powertrain | Phased-Array Radar | 5G Base Station | UAV Avionics | Medical Imaging
Superb Automation provides complete PCB+PCBA+components sourcing solutions for these industries.
Technical Specifications
| Parameter | Value |
|---|---|
| Noise Figure | Low-noise design for receiver applications |
| Frequency Range | Refer to datasheet for detailed specifications |
| Supply Voltage | Standard bias voltage; see datasheet |
| Package Type | Surface-mount / flange-mount RF package |
Complementary Parts
CMPA0060025F1 – Complementary RF & Microwave Devices from CREE. Refer to datasheet for detailed specifications and cross-reference information.
GTVA107001EC-V1 – Complementary RF & Microwave Devices from CREE. Refer to datasheet for detailed specifications and cross-reference information.
