SU11574C
SU11574C-910P5 is an 8.5–10.5 GHz X-Band microwave power amplifier featuring 37.5 dBm saturated output power, 28.5 dB typical gain and 55% PAE for RF, radar and microwave applications.
Product Specifications
RF & Microwave Devices
SU11574C-910P5 8.5–10.5 GHz X-Band Microwave Power Amplifier
X-Band power amplifier delivering 37.5 dBm saturated output power, 28.5 dB typical gain and 55% power-added efficiency in a compact microwave die configuration — for radar, microwave communication and RF test systems.
8.5–10.5GHz Frequency
37.5 dBmSaturated Output
28.5 dBTypical Gain
55%Typical PAE
Product Overview
SUPERB supplies the SU11574C-910P5, an 8.5–10.5 GHz X-Band microwave power amplifier designed for high-frequency RF systems requiring high output power, high gain, stable frequency response and efficient RF power amplification.
The device provides a typical 37.5 dBm saturated output power (approximately 5.6 W), with 28.5 dB typical power gain and 55% typical power-added efficiency (PAE). Covering the 8.5–10.5 GHz band, it is suited to X-Band radar, microwave communication, RF front-end, signal transmission and high-frequency test applications.
SUPERB supports customers with RF component sourcing, specification confirmation, engineering samples, technical documentation and volume procurement for this device.
Electrical Specifications
| Parameter | Min. | Typical | Max. | Unit |
|---|---|---|---|---|
| Frequency Range | — | 8.5–10.5 | — | GHz |
| Saturated Output Power | — | 37.5 | — | dBm |
| Power Gain | — | 28.5 | 35 | dB |
| Power Gain Flatness | — | — | ±0.3 | dB |
| Power-Added Efficiency | 46 | 55 | — | % |
| Linear Gain | — | 32 | 35 | dB |
| Linear Gain Flatness | — | — | ±4 | dB |
| Input VSWR | — | 2.0 | 2.7 | — |
| Drain Voltage | — | +8 | — | V |
| Gate Voltage | — | −0.75 | — | V |
| Test Temperature | — | +25 | — | °C |
| Configuration | Microwave die | |||
Test conditions: TA = +25°C, VD = +8 V, VG = −0.75 V. Actual system output power depends on operating conditions, matching networks, input drive level, thermal design and system configuration.
Key Features
37.5 dBm High-Power Output
Typical saturated output power of 37.5 dBm (~5.6 W) with a stable response across the 8.5–10.5 GHz range.
28.5 dB Gain
28.5 dB typical power gain (35 dB max), reducing the number of amplification stages before the final RF power stage.
55% PAE
55% typical / 46% minimum power-added efficiency, improving DC-to-RF conversion and reducing thermal burden.
Wide 2 GHz Bandwidth
Full 8.5–10.5 GHz X-Band coverage, supporting broadband radar and communication architectures.
Tight Gain Flatness
±0.3 dB power gain flatness, supporting consistent X-Band performance across the band.
Compact Die Configuration
Die-level layout with dedicated RF input/output and drain/gate bias pads for compact microwave assemblies.
Applications
X-Band RadarRadar transmitters, RF front-ends, phased-array architectures
Microwave CommunicationRF transmitter systems, point-to-point microwave links
RF Test & MeasurementMicrowave test equipment, signal generators, RF power testing
High-Frequency RF SystemsRF driver stages, power amplifier stages, custom microwave assemblies
Why Choose SUPERB as Your RF Component Partner
RF component sourcing across X-Band and microwave devices
Product specification confirmation against your requirements
Engineering sample and prototype quantity support
Technical documentation and datasheet provision
RF component quotation with lead-time visibility
Application requirement matching support
Volume procurement and supply planning
Customized sourcing for specialized RF solutions
Request a Quote for SU11574C-910P5
Send your required frequency, output power, gain, PAE, bias voltage and package/die requirements — SUPERB will assist in identifying an appropriate RF power amplifier solution and confirm pricing, availability and lead time.
Send Your RFQSUPERB AUTOMATION CO., LIMITED — RF component sourcing and supply support. Electronic component sourcing and RF/microwave component solutions for specialized electronic and high-frequency systems.