SUPERB AUTOMATION CO., LIMITED presents the SU11574C-910P5, an 8.5–10.5 GHz X-Band Microwave Power Amplifier designed for high-frequency RF systems requiring high output power, high gain, stable frequency response and efficient RF power amplification.

The SU11574C-910P5 provides a typical 37.5 dBm saturated output power, corresponding to approximately 5.6 W, with 28.5 dB typical power gain and 55% typical power-added efficiency (PAE).

Operating from 8.5 GHz to 10.5 GHz, the device covers a commonly used X-band frequency range and can be considered for integration into X-band radar, microwave communication, RF front-end, signal transmission and high-frequency test applications.

Key Features

• Model: SU11574C-910P5

• Frequency Range: 8.5–10.5 GHz

• Band: X-Band

• Saturated Output Power: 37.5 dBm typical

• Equivalent Saturated Output Power: approximately 5.6 W

• Power Gain: 28.5 dB typical

• Maximum Power Gain: 35 dB

• Power-Added Efficiency (PAE): 55% typical, 46% minimum

• Power Gain Flatness: ±0.3 dB

• Linear Gain: 32 dB typical

• Linear Gain Flatness: ±4 dB

• Input VSWR: 2.0 typical, 2.7 maximum

• Drain Voltage: +8 V

• Gate Voltage: −0.75 V

• Test Temperature: +25°C

• Microwave die-level configuration

SU11574C-910P5 Electrical Specifications

Test Conditions: TA = +25°C, VD = +8 V, VG = −0.75 V.

8.5–10.5 GHz X-Band Power Amplifier

The SU11574C-910P5 operates across the 8.5–10.5 GHz X-band frequency range, providing a 2 GHz operating bandwidth.

The typical saturated output power is 37.5 dBm across the specified frequency range. In linear power terms, 37.5 dBm is approximately 5.6 W, making this device suitable for RF architectures requiring several watts of X-band output power.

X-band power amplifiers are commonly used in radar and communication systems, and commercial RF manufacturers offer products specifically optimized for the 8.5–10.5 GHz range.

37.5 dBm High-Power RF Output

One of the key characteristics of the SU11574C-910P5 is its 37.5 dBm typical saturated output power.

For RF engineers searching for a 5 W X-band power amplifier, this specification is particularly relevant:

37.5 dBm ≈ 5.62 W

Actual system output power will depend on operating conditions, matching networks, input drive level, thermal design and system configuration.

The saturated output power curve supplied for the device shows a relatively stable response across the 8.5–10.5 GHz frequency range.

28.5 dB Gain X-Band Microwave Amplifier

The SU11574C-910P5 provides 28.5 dB typical power gain, with a maximum specified power gain of 35 dB.

High gain can help reduce the number of amplification stages required before the final RF power stage and can simplify RF link-budget design.

The device also provides:

Typical Linear Gain: 32 dB

Linear Gain Flatness: ±4 dB maximum

These characteristics make the SU11574C-910P5 a candidate for RF systems where both gain and broadband X-band operation are important.

55% PAE X-Band Power Amplifier

Power-added efficiency is an important specification when selecting a microwave power amplifier.

The SU11574C-910P5 provides:

Typical PAE: 55%

Minimum PAE: 46%

The supplied PAE-versus-frequency curve shows peak efficiency in the central portion of the 8.5–10.5 GHz operating band.

For X-band transmitter designs, higher PAE can help improve DC-to-RF conversion efficiency and may reduce the thermal burden associated with RF power amplification.

Commercial X-band PA products similarly highlight PAE alongside output power and gain when specifying RF performance.

X-Band RF Power Amplifier Applications

The SU11574C-910P5 can be evaluated for a range of high-frequency RF and microwave applications, including:

X-Band Radar

• X-band radar transmitter

• Radar RF front-end

• Radar signal amplification

• Microwave radar systems

• Phased-array RF architectures

Microwave Communication

• Microwave communication equipment

• RF transmitter systems

• High-frequency wireless links

• Microwave RF front-end

• Point-to-point microwave systems

RF Test & Measurement

• RF signal amplification

• Microwave test equipment

• X-band signal generators

• RF power testing

• Microwave laboratory equipment

High-Frequency RF Systems

• RF driver stages

• Power amplifier stages

• Microwave modules

• RF transmission chains

• Customized microwave assemblies

X-band power amplifiers are widely associated with radar, communications and related microwave systems; examples from major RF suppliers include products targeting radar and communications applications.

Compact Microwave Die Configuration

The supplied mechanical drawing indicates a compact die-level configuration with dedicated:

• RF Input

• RF Output

• Drain bias

• Gate bias

The drawing specifies dimensions in μm, with the die thickness and pad-related dimensions provided in the original technical information.

For production implementation, customers should use the latest controlled mechanical drawing and assembly documentation supplied by SUPERB AUTOMATION CO., LIMITED.

X-Band Power Amplifier for RF Engineers

When selecting an 8.5–10.5 GHz power amplifier, engineers typically need to evaluate more than frequency range alone.

Important parameters include:

• Operating frequency

• Saturated output power

• Linear output power

• Power gain

• Gain flatness

• PAE

• Input/output matching

• VSWR

• Bias voltage

• Thermal requirements

• Package or die configuration

• RF input/output implementation

The SU11574C-910P5 combines 8.5–10.5 GHz frequency coverage, 37.5 dBm saturated output power, 28.5 dB typical gain and 55% typical PAE, providing a compact set of specifications for X-band RF design evaluation.

Why Choose SUPERB AUTOMATION CO., LIMITED?

SUPERB AUTOMATION CO., LIMITED provides electronic component sourcing and RF/microwave component solutions for customers developing specialized electronic and high-frequency systems.

For the SU11574C-910P5 X-Band Power Amplifier, SUPERB can support customers with:

• RF component sourcing

• Product specification confirmation

• Engineering sample requirements

• Technical documentation

• RF component quotation

• Application requirement matching

• Volume procurement

• Customized sourcing support

Customers can provide their required frequency, output power, gain, PAE, bias voltage, package/die requirements and application, and SUPERB can assist with identifying an appropriate RF power amplifier solution.

SU11574C-910P5 Technical Summary

Model: SU11574C-910P5
Product Type: X-Band Microwave Power Amplifier
Frequency: 8.5–10.5 GHz
Saturated Output Power: 37.5 dBm typ.
Equivalent Output Power: ≈5.6 W
Power Gain: 28.5 dB typ.
Maximum Power Gain: 35 dB
PAE: 55% typ., 46% min.
Gain Flatness: ±0.3 dB typ.
Linear Gain: 32 dB typ.
Linear Gain Flatness: ±4 dB max.
Input VSWR: 2 typ., 2.7 max.
Drain Voltage: +8 V
Gate Voltage: −0.75 V
Test Temperature: +25°C
Configuration: Microwave die
Supplier: SUPERB AUTOMATION CO., LIMITED