Contact Us
  • Home
  • PCBA
  • 5G AMF Access Management Board PCBA

5G AMF Access Management Board PCBA

5G AMF Access Management Board PCBA. 5G PCBA, BBU Baseband, RRU Remote Radio, AAU Active Antenna, DU/CU, O-RAN, UPF Core, OTN Optical, WDM/DWDM, PTP Grandm
quote now

Product Specifications

5G AMF Access Management Board PCBA

24-Layer High-Availability Control-Plane Blade — UE Registration, 5G-AKA Authentication, NAS Security

Product Overview

The 5G AMF Access Management Board is the single entry point for all UE connections to the 5G core network, implementing the full NAS signaling stack (5GMM and 5GSM passthrough) defined in 3GPP TS 24.501 with carrier-grade reliability. Built on a 24-layer Megtron 6 PCB, the board integrates multi-core processors with dedicated cryptographic acceleration engines for 5G-AKA and EAP-AKA' authentication procedures (per 3GPP TS 33.501), capable of processing millions of UE registrations per hour. The board exposes 4× 100GbE interfaces for the SBA reference points: N1/N2 (NAS from gNB via NGAP), N8 (UDM for subscription retrieval), N11 (SMF for session management), N12 (AUSF for authentication vector fetch), N14 (inter-AMF UE context transfer), and N15 (PCF for policy association). Hardware-based NAS security — including integrity protection (NIA1/128-NIA1, NIA2/128-NIA2, NIA3/128-NIA3) and ciphering (NEA1/128-NEA1, NEA2/128-NEA2, NEA3/128-NEA3) per TS 33.501 — is executed at line rate without burdening general-purpose compute cores. The board maintains a real-time UE context store in battery-backed DRAM, ensuring registration state survives AMF process restarts. Geo-redundant AMF set deployment is supported via the N14 interface with hardware-assisted context transfer, enabling seamless UE mobility across geographically distributed AMF pools.

Key Specifications

Layer Count24 layers
MaterialMegtron 6 low-loss
Interfaces4× 100GbE (N1/N2/N8/N11/N12/N14/N15)
Authentication5G-AKA / EAP-AKA' Hardware Acceleration
NAS SecurityNIA1/2/3 + NEA1/2/3 HW Ciphering
Context StoreBattery-Backed DRAM (NV-DIMM)
MobilityN14 Geo-Redundant AMF Set Support
Compliance3GPP TS 24.501 / 33.501

PCBA Assembly Challenges

The AMF board's 24-layer assembly demands particular attention to the battery-backed NV-DIMM subsystem. The supercapacitor backup module, which maintains UE context DRAM for up to 72 hours during power loss, must be soldered with precision to avoid thermal degradation of the capacitor electrolyte — reflow profiles are capped at 230°C peak in this zone, requiring a stepped conveyor speed adjustment. The cryptographic accelerator BGA (2,800+ balls at 0.8 mm pitch) must achieve void rates below 10% per IPC Class 3 on all power balls to ensure reliable current delivery during high-throughput authentication bursts. The four QSFP28 cages require coplanarity within 0.1 mm across the entire 44-pin SMT footprint to prevent intermittent optical transceiver connectivity. Because the board operates in the AMF's always-on role, all power magnetics are redundantly placed with independent SMT assembly per channel, and each power stage is individually verified for solder joint integrity using 3D X-ray. The mixed-technology board also incorporates press-fit connectors for the ATCA backplane interface, which are installed post-reflow using a controlled-force press with real-time force-displacement monitoring per insertion.

Test Strategy

AMF board test begins with flying probe ICT validating all passive networks, the dual redundant power domains, and the supercapacitor backup charging circuit. Boundary scan (JTAG) tests processor-to-NV-DIMM interconnects, crypto accelerator PCIe lanes, and 100GbE controller paths. The battery-backed DRAM subsystem is tested by power-cycling the board under a simulated 5 million UE context load and verifying 100% context retention after a 60-second power interruption. Authentication stress testing generates 100,000 5G-AKA vectors per second and validates correct MAC (Message Authentication Code) computation and RES* verification in the crypto accelerator. NAS security testing exercises all NIA and NEA algorithm combinations with 3GPP-defined test vectors from TS 33.501 Annex D. Geo-redundancy is validated by establishing N14 context transfer between two AMF boards and verifying sub-50-ms UE context handover. A 72-hour burn-in at 45°C with sustained 200,000 UE registrations per hour monitors NV-DIMM bit error rates and crypto accelerator thermal stability.

PCB Manufacturing Difficulty

The 24-layer AMF PCB requires precise control of the mixed dielectric stack-up combining Megtron 6 for high-speed 100GbE layers (Dk 3.54, Df 0.002 at 14 GHz) with high-Tg FR-4 for power and ground planes (Tg 180°C). The supercapacitor backup circuit occupies a dedicated copper island with increased 3 oz copper weight for low-IR-drop power delivery to NV-DIMM slots, demanding careful etching compensation to maintain trace width tolerances. Backdrilling removes via stubs on all high-speed signal vias with stub length under 10 mil to avoid resonance below 14 GHz. Differential pairs for 100GbE (100 Ω) and PCIe (85 Ω) are modeled with 3D field solvers and verified per layer via TDR coupon testing. Registration across all 24 layers is maintained within ±3 mil, with particular attention to the alignment between signal layers and their reference plane anti-pad openings. Finished boards undergo 100% AOI, impedance coupon testing, and destructive microsection analysis per IPC-6012 Class 3 on every panel to verify plating thickness and barrel integrity.

More information