50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT

The CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Product Specifications

Part Number

CGHV96050F2

Description

50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT

Min Frequency(MHz)

7900

Max Frequency(MHz)

9600

Gain(dB)

10.0

Package Category

Flange

Features

8.4 – 9.6 GHz Operation

80 W POUT typical

10 dB Power Gain

55 % Typical PAE

50 Ohm Internally Matched

<0.1 dB Power Droop

Applications

Marine Radar

Air Traffic Control

Maritime Vessel Traffic Control

Port Security

Weather Monitoring

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