The Qorvo QPA2610 X-band power amplifier is a high-performance amplifier, fabricated using the 0.15µm silicon carbide-based gallium nitride process (QGaN15). The QPA2610 power amplifier meets the tight lattice spacing requirements for phased array radar applications. The QPA2610 amplifier has matching RF input and output ports to 50Ω, including an integrated DC blocking capacitor. The storage temperature range of the QPA2610 power amplifier is from -55°C to 150°C. The maximum working gate voltage range of the QPA2610 amplifier is from -4V to 0V. These power amplifiers are highly suitable for use in radar, communication, and satellite communication. Standardization

 

QPA2610:

 

Frequency range: 8.5GHz to 10.5GHz 

When PIN = 10 dBm: 

Output power level: > 33 dBm 

Power-added efficiency (PAE): > 47% 

Small signal gain: 37.5 dB 

QPA2611:

 

Frequency range: 8GHz to 12GHz 

When PIN = 12 dBm: 

Output power level: > 37 dBm 

>42% PAE

 

Small signal gain: 35 dB 

QPA2612:

 

Frequency range: 8GHz to 12GHz 

When PIN = 18 dBm: 

Output power level: > 41 dBm 

>40% PAE

 

Small signal gain: 34 dB 

Storage temperature range: -55°C to +150°C 

Maximum gate voltage range: -4V to 0V 

Application

 

Radar

 

Communication

 

Satellite communication