TQP7M9106 is an industry-standard high-linearity, high-gain 2W driver amplifier with RoHS compliance and QFN surface-mount packaging. This InGaP/GaAs HBT offers high performance within the frequency range of 0.05 to 1.5 GHz, achieving a 20.8 dB gain at 940 MHz, +50 dBm OIP3 and +33 dBm P1dB, while consuming only 455 mA of static current. All devices have undergone 100% RF and DC testing. 

TQP7M9106 adopts patented on-chip circuit technology, making it distinct from other products in the market. This amplifier integrates on-chip DC overvoltage and RF overdrive protection. This protection shields the amplifier from potential DC voltage surges and high input RF input power levels that may occur in the system. 

The TQP7M9106 is designed to be used as a driver amplifier in wireless infrastructure that requires high linearity, medium power and high efficiency. This device is an excellent candidate for transceiver line cards and high-power amplifiers in current and next-generation multi-carrier 3G/4G base stations. 

Product features

 

50 - 1500 MHz 

At 940 MHz, it is 33 dBm P1dB. 

+940 MHz: 50 dBm output IP3 

At 940 MHz, the gain is 20.8 dB. 

+5V single power supply, 455 milliampere current 

Internal RF over-drive protection for patents 

Obtained patented internal DC overvoltage protection 

On-chip ESD protection 

 Shut-off capability 

It can handle a 10:1 VSWR under the conditions of Vcc = +5 V, 0.9 GHz, 33 dBm CW Pout or 23.5 dBm WCDMA Pout. 

Application program

 

 Repeater 

 BTS Transceiver 

 BTS High-power Amplifier 

 CDMA/WCDMA/LTE 

General Wireless